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2010.06 - Rev.B

Infrared light emitting diode, side-view type

SIM-22ST

The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with

1.5 lens.



Applications



Dimensions (Unit : mm)

Light source for sensors



Features

1) Compact package (4.7x4.6 mm) with lens.

2) High efficiency, high output.

3) Emission spectrum well suited to silicon detectors

(

4) Good current-optical output linearity.

5) Long life, high reliability.



Absolute maximum ratings (Ta=25

C)

Parameter

Symbol

Topr

Tstg

Limits

−25 to +85

−30 to +100

50

5

80

0.5

Unit

mA

V

mW

A

°C

°C

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature



Electrical and optical characteristics (Ta=25

C)

Parameter

Symbol

Δλ

tr

tf

Min.

−

0.48

−

−

−

−

−

−

Typ.

0.8

1.3

1.3

−

950

40

±30

1.0

Max.

−

1.94

1.6

10

−

−

−

−

Unit

mW/sr

=10mA∗

=50mA

=5V

=10mA

=20mA

=50mA

=50mA

mA

V

μA

nm

nm

deg

μs

fc

−

1.0

−

=50mA

MHz

Conditions

Emitting strength

Emitting strength

Forward voltage

Reverse current

Peak light emitting wavelength

Spectral line half width

Half-viewing angle

Response time

Cut-off frequency

4.1

4.6

(2.54)

0.64

R0.75

R0.5

R0.5

2

−0.45

0.40

2

−0.65

2-C0.7

1 Cathode

2 Anode

1

2

0.15

Notes:

± 0.2 unless

otherwise indicated.

2. Value in parenthese is size

at base of leads.