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DS5000FP Datasheet(PDF) 5 Page - Dallas Semiconductor |
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DS5000FP Datasheet(HTML) 5 Page - Dallas Semiconductor |
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5 / 22 page ![]() DS5000FP 5 of 22 PIN DESCRIPTION (continued) PIN NAME FUNCTION 11, 9, 7, 5, 1, 79, 77, 75 P0.0–P0.7 General-Purpose I/O Port 0. This port is open-drain and cannot drive a logic 1. It requires external pullups. Port 0 is also the multiplexed Expanded Address/Data bus. When used in this mode, it does not require pullups. 13, 14 VCC Power Supply, +5V 16, 8, 18, 80, 76, 4, 6, 20, 24, 26, 28, 30, 33, 35, 37 BA14– BA0 Byte-Wide Address Bus Bits 14–0. This 15-bit bus is combined with the nonmultiplexed data bus (BD7–BD0) to access NV SRAM. Decoding is performed on CE1 and CE2 . Read/write access is controlled by R/ W. BA14–BA0 connect directly to an 8k or 32k SRAM. If an 8k RAM is used, BA13 and BA14 are unconnected. Note: BA13 and BA14 are inverted from the true logical address. BA14 is lithium backed. 71, 69, 67, 65, 61, 59, 57, 55 BD7–BD0 Byte-Wide Data Bus Bits 7–0. This 8-bit bidirectional bus is combined with the nonmultiplexed address bus (BA14–BA0) to access NV SRAM. Decoding is performed on CE1 and CE2 . Read/write access is controlled by R/ W. BD7–BD0 connect directly to an 8k or 32k SRAM, and optionally to a real-time clock. 10 R/ W Read/Write (Active Low). This signal provides the write enable to the SRAMs on the byte-wide bus. It is controlled by the memory map and partition. The blocks selected as Program (ROM) is write protected. 74 CE1 Active-Low Chip Enable 1. This is the primary decoded chip enable for memory access on the byte-wide bus. It connects to the chip enable input of one SRAM. CE1 is lithium backed. It will remain in a logic high inactive state when VCC falls below VLI. 78 CE2 Active-Low Chip Enable 2. This chip enable is provided to bank switch to a second block of 32k bytes of nonvolatile data memory. It connects to the chip enable input of one SRAM or one lithium-backed peripheral such a real-time clock. CE2 is lithium backed. It will remain in a logic high inactive state when VCC falls below VLI. 12 VCCO VCC Output. This is switched between VCC and VLI by internal circuits based on the level of VCC. When power is above the lithium input, power will be drawn from VCC. The lithium cell remains isolated from a load. When VCC is below VLI, the VCCO switches to the VLI source. VCCO is connected to the VCC pin of an SRAM. 54 VLI Lithium Voltage Input. Connect to a lithium cell greater than VLImin and no greater than VLImax as shown in the electrical specifications. Nominal value is +3V. 2, 3, 22, 23, 32, 42, 43, 62, 63, 72 N.C. No Connection. Do not connect. |
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