MMFTN20 datasheet(2/2 Pages) DIOTEC

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MMFTN20

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 10 µA

V(BR)DSS

50 V

Drain-Source leakage current – Drain-Source-Leckstrom

VDS = 40 V

IDSS

1 µA

Gate-Source leakage current – Gate-Source-Leckstrom

VGS = ± 20 V

IGSS

± 100 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VGS, ID = 1 mA

VGS(th)

0.4 V

1.8 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 100 mA

VGS = 5 V, ID = 100 mA

VGS = 2.5 V, ID = 10 mA

RDS(on)

15 Ω

20 Ω

30 Ω

Forward Transfer Admittance – Übertragungssteilheit

VDS = 10 V, ID = 100 mA

gfs

40 mS

Input Capacitance – Eingangskapazität

VDS = 10 V, f = 1 MHz

Ciss

15 pF

Output Capacitance – Ausgangskapazität

VDS = 10 V, f = 1 MHz

Coss

15 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 10 V, f = 1 MHz

Crss

5 pF

Turn-On Time – Einschaltzeit

VGS = 0 ... 10 V, VDD = 20 V, ID = 100 mA

t(on)

5 ns

Turn-Off Time – Ausschaltzeit

VGS = 10 ... 0 V, VDD = 20 V, ID = 100 mA

t(off)

10 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 430 K/W 1)

< 500 K/W 2)

Device mounted on a ceramic substrate 10 x 8 x 0.7 mm

Bauteil montiert auf Keramiksubstrat 10 x 8 x 0.7 mm

Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial

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