MMFTN138 datasheet(2/2 Pages) DIOTEC

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MMFTN138

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 250 µA

V(BR)DSS

50 V

Drain-Source leakage current – Drain-Source-Leckstrom

VDS = 50 V

VDS = 30 V

IDSS

500 nA

100 nA

Gate-Source leakage current – Gate-Source-Leckstrom

VGS = ± 20 V

IGSS

± 100 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VDS, ID = 1 mA

VGS(th)

0.8 V

1.6 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 220 mA

VGS = 4.5 V, ID = 220 mA

RDS(on)

3.5 Ω

6 Ω

Forward Transconductance – Übertragungssteilheit

VDS = 10 V, ID = 220 mA

gFS

0.12 S

Input Capacitance – Eingangskapazität

VDS = 25 V, f = 1 MHz

Ciss

60 pF

Output Capacitance – Ausgangskapazität

VDS = 25 V, f = 1 MHz

Coss

25 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 25 V, f = 1 MHz

Crss

10 pF

Turn-On Delay Time – Einschaltverzögerung

VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω

td(on)

8 ns

Turn-On Rise Time – Anstiegszeit

VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω

12 ns

Turn-Off Delay Time – Ausschaltverzögerung

VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω

td(off)

16 ns

Turn-Off Fall Time – Abfallzeit

VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω

22 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 350 K/W

Drain-Source Diode

Maximum Ratings and Characteristics (Tj = 25°C)

Grenz- und Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Maximum Continuos Source Current

220 mA

Maximum Pulse Source Current

ISM

880 mA

Drain-Source Diode Forward Voltage

IS = 440 mA

VGD

1.4 V

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