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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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InGaP HBT ½ Watt High IP3

AMPLIFIER, 1.7 - 2.5 GHz

v02.0605

General Description

Features

Functional Diagram

The HMC455LP3 & HMC455LP3E are high output

IP3 GaAs InGaP Heterojunction Bipolar Transistor

(HBT) ½ watt MMIC amplifiers operating between 1.7

and 2.5 GHz. Utilizing a minimum number of external

components the amplifier provides 13 dB of gain and

+28 dBm of saturated power at 56% PAE from a single

+5 Vdc supply voltage. The high output IP3 of +42

dBm coupled with the low VSWR of 1.4:1 make the

HMC455LP3 & HMC455LP3E ideal driver amplifiers for

PCS/3G wireless infrastructures. A low cost, leadless

3x3 mm QFN surface mount package (LP3) houses

the linear amplifier. The LP3 provides an exposed

base for excellent RF and thermal performance.

Output IP3: +42 dBm

Gain: 13 dB

56% PAE @ +28 dBm Pout

+19 dBm W-CDMA Channel Power @ -45 dBc ACP

3x3 mm QFN SMT Package

Typical Applications

This amplifier is ideal for high linearity applications:

• Multi-Carrier Systems

• GSM, GPRS & EDGE

• CDMA & WCDMA

• PHS

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

1.7 - 1.9

1.9 - 2.2

2.2 - 2.5

GHz

Gain

11.5

13.5

10.5

13

9

11.5

dB

Gain Variation Over Temperature

0.012

0.02

0.012

0.02

0.012

0.02

dB / °C

Input Return Loss

13

15

10

dB

Output Return Loss

10

18

15

dB

Output Power for 1dB Compression (P1dB)

24

27

24.5

27.5

23

26

dBm

Saturated Output Power (Psat)

28.5

28

27

dBm

Output Third Order Intercept (IP3)

37

40

39

42

37

40

dBm

Noise Figure

7

6

6

dB

Supply Current (Icq)

150

150

150

mA