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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC459

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 18 GHz

v01.1007

General Description

Features

Functional Diagram

The HMC459 is a GaAs MMIC PHEMT Distributed

Power Amplifier die which operates between DC

and 18 GHz. The amplifier provides 17 dB of gain,

+31.5 dBm output IP3 and +25 dBm of output power

at 1 dB gain compression while requiring 290 mA

from a +8V supply. Gain flatness is good making the

HMC459 ideal for EW, ECM and radar driver amplifier

applications. The HMC459 amplifier I/O’s are inter-

nally matched to 50 Ohms facilitating easy integration

into Multi-Chip-Modules (MCMs). All data is with the

chip in a 50 Ohm test fixture connected via 0.025mm

(1 mil) diameter wire bonds of minimal length 0.31mm

(12 mils).

P1dB Output Power: +25 dBm

Gain: 17 dB

Output IP3: +31.5 dBm

Supply Voltage: +8V @ 290 mA

50 Ohm Matched Input/Output

Die Size: 3.12 x 1.63 x 0.1 mm

Typical Applications

The HMC459 wideband driver is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military & Space

• Test Instrumentation

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min

Typ

Max

Units

Frequency Range

DC - 2.0

DC - 6.0

DC - 10.0

DC - 18.0

GHz

Gain

16.5

18.5

15

18

14

17

9

12

dB

Gain Flatness

±0.5

±0.75

±0.75

dB

Gain Variation Over Temperature

0.02

0.03

0.02

0.03

0.03

0.04

0.035

0.045

dB/ °C

Input Return Loss

22

19.5

19

10

dB

Output Return Loss

27

15

14

14

dB

Output Power for 1 dB

Compression (P1dB)

21

24

20.5

24.5

22

25

14

17

dBm

Saturated Output Power (Psat)

26.5

26.5

26.5

21

dBm

Output Third Order Intercept

(IP3)

40

34

31.5

26

dBm

Noise Figure

4.0

4.0

3.0

6.5

dB

Supply Current

(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)

290

290

290

290

mA

* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.