For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 1

GaAs pHEMT MMIC

LOW NOISE AMPLIFIER, 2 - 20 GHz

v04.1010

General Description

Features

Functional Diagram

The HMC462LP5 & HMC462LP5E are GaAs MMIC

pHEMT Low Noise Distributed Amplifiers in leadless

5x5 mm surface mount packages which operate

between 2 and 20 GHz. The self-biased amplifier

provides 13 dB of gain, 2.5 to 3.5 dB noise figure and

+14.5 dBm of output power at 1 dB gain compression

while requiring only 66 mA from a single +5V supply.

Gain flatness is excellent from 6 - 18 GHz making

the HMC462LP5 & HMC462LP5E ideal for EW,

ECM RADAR and test equipment applications. The

wideband amplifier I/Os are internally matched to 50

Ohms and are internally DC blocked.

Noise Figure: 2.5 dB @ 10 GHz

Gain: 13 dB

P1dB Output Power: +14.5 dBm @ 10 GHz

Self-Biased: +5V @ 66mA

50 Ohm Matched Input/Output

Typical Applications

The HMC462LP5 / HMC462LP5E Wideband LNA is

ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Test Instrumentation

• Fiber Optics

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

2 - 6

6 - 14

14 - 20

GHz

Gain

12

14

11

13

10

12

dB

Gain Flatness

±0.5

±0.5

±0.5

dB

Gain Variation Over Temperature

0.015

0.025

0.02

0.03

0.03

0.04

dB/ °C

Noise Figure

3.0

4.0

2.5

4.0

4.0

6.0

dB

Input Return Loss

15

13

11

dB

Output Return Loss

12

12

8

dB

Output Power for 1 dB Compression (P1dB)

12

15

11

14

9

12

dBm

Saturated Output Power (Psat)

17

16

15

dBm

Output Third Order Intercept (IP3)

26

25

22

dBm

Supply Current

(Idd) (Vdd= 5V)

66

85

66

85

66

85

mA