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HMC464LP5 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC464LP5 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 6 page ![]() For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 11 - 258 HMC464LP5 / 464LP5E GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz v03.0308 General Description Features Functional Diagram The HMC464LP5 & HMC464LP5E are GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm surface mount packages which operate bet- ween 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5(E) ideal for EW, ECM and radar driver amplifiers as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. P1dB Output Power: +26 dBm Gain: 14 dB Output IP3: +30 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package Typical Applications The HMC464LP5 / HMC464LP5E is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C3I • Test Instrumentation • Fiber Optics Electrical Specifications, T A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1] Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 GHz Gain 12 14 11.5 13.5 8 11 dB Gain Flatness ±0.5 ±0.5 ±1.0 dB Gain Variation Over Temperature 0.025 0.035 0.03 0.04 0.05 0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 22 25 18 21 dBm Saturated Output Power (Psat) 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. |
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