For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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P1dB vs. Temperature

Psat vs. Temperature

Output IP3 vs. Temperature

Gain, Power & Output IP3

vs. Supply Voltage @ 10 GHz, Fixed Vgg1

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9 Vdc

Gate Bias Voltage (Vgg1)

-2 to 0 Vdc

Gate Bias Voltage (Vgg2)

(Vdd -8.0) Vdc to Vdd

RF Input Power (RFIN)(Vdd = +8 Vdc)

+20 dBm

Channel Temperature

150 °C

Continuous Pdiss (T= 85 °C)

(derate 51.5 mW/°C above 85 °C)

3.35 W

Thermal Resistance

(channel to ground paddle)

19.4 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

ESD Sensitivity (HBM)

Class 1A

Vdd (V)

Idd (mA)

+7.5

292

+8.0

290

+8.5

288

Typical Supply Current vs. Vdd

10

12

14

16

18

20

22

24

26

28

30

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

10

12

14

16

18

20

22

24

26

28

30

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

16

18

20

22

24

26

28

30

32

34

36

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

10

12

14

16

18

20

22

24

26

28

30

32

7.5

8

8.5

Gain

P1dB

Psat

IP3

Vdd (V)

GaAs PHEMT MMIC

POWER AMPLIFIER, 2 - 20 GHz

v03.0308

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS