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Bypass Mode

Input Return Loss vs. Temperature

Bypass Mode

Output Return Loss vs. Temperature

Bypass Mode

Input IP3 vs. Temperature

Bypass Mode

Input P1dB vs. Temperature

0

4

8

12

16

20

3.4

3.5

3.6

3.7

3.8

+25 C

+85 C

-40 C

FREQUENCY (GHz)

20

22

24

26

28

30

3.4

3.5

3.6

3.7

3.8

+25 C

+85 C

-40 C

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

3.4

3.5

3.6

3.7

3.8

+25 C

+85 C

-40 C

FREQUENCY (GHz)

-15

-12

-9

-6

-3

0

3.4

3.5

3.6

3.7

3.8

+25 C

+85 C

-40 C

FREQUENCY (GHz)

GaAs MMIC LOW NOISE AMPLIFIER

w/ BYPASS MODE, 3.4 - 3.8 GHz

v03.1206

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+2.7

7.6

+3.0

9.0

+3.3

10.2

Drain Bias Voltage (Vdd)

+7.0 Vdc

RF Input Power (RFIN)

(Vdd = +3.0 Vdc)

LNA Mode

Bypass Mode

0 dBm

+30 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 1.8 mW/°C above 85 °C)

0.117 W

Thermal Resistance

(channel to ground paddle)

556 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

LNA Mode

Vctl= Vdd @ 1.6 mA

Bypass Mode

Vctl= 0Vdc @ -13 µA

Vdd= +3V ±10%

Truth Table

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS