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8S2TH06FP Datasheet(PDF) 1 Page - Vishay Siliconix

Part # 8S2TH06FP
Description  Hyperfast Rectifier, 8 A FRED Pt
PDF  7 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

8S2TH06FP Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 94553
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Hyperfast Rectifier, 8 A FRED Pt®
VS-8S2TH06FP
Vishay Semiconductors
FEATURES
• Hyperfast recovery time, extremely low Qrr
• 175 °C maximum operating junction temperature
• High frequency PFC CCM operation
• Low leakage current
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
DESCRIPTION
VS-8S2TH06FP 600 V series are the state of the art
tandem hyperfast recovery rectifiers: excellent switching
performance and extremely low forward voltage drop trade
off is overcome, boosting overall application performance.
Specially designed for CCM PFC application, these devices
show incomparable performance in every current intensive
hard switching application.
Optimized
reverse
recovery
stored
charge
enables
downsizing of boosting switch and cooling system,
increased operating frequency make possible use of smaller
reactive elements. Cost effective PFC application is then
possible with high efficiency over wide input voltage range
and loading factor.
Plastic insulated package features easy mounting together
with not insulated parts.
PRODUCT SUMMARY
Package
2L TO-220FP
IF(AV)
8 A
VR
600 V
VF at IF
2.4 V
trr (typ.)
See Recovery table
TJ max.
175 °C
Diode variation
Doubler
1
2
2L TO-220 FULL-PAK
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Repetitive peak reverse voltage
VRRM
600
V
DC forward current
IF
50 % duty cycle, rect. waveforms, TC = 93 °C
8
A
Non-repetitive peak surge current
IFSM
TC = 25 °C
100
Operating junction and storage temperatures
TJ, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
-
-
V
Forward voltage
VF
IF = 8 A
-
2.1
2.4
IF = 8 A, TJ = 125 °C
-
1.7
2
IF = 8 A, TJ = 150 °C
-
1.6
1.8
Reverse leakage current
IR
VR = VR rated
-
< 1
10
μA
TJ = 125 °C, VR = VR rated
-
7
80
TJ = 150 °C, VR = VR rated
-
27
100
Junction capacitance
CT
VR = 600 V
-
12
-
pF


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