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8S2TH06FP Datasheet(PDF) 1 Page - Vishay Siliconix |
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8S2TH06FP Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 7 page ![]() Document Number: 94553 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Hyperfast Rectifier, 8 A FRED Pt® VS-8S2TH06FP Vishay Semiconductors FEATURES • Hyperfast recovery time, extremely low Qrr • 175 °C maximum operating junction temperature • High frequency PFC CCM operation • Low leakage current • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level DESCRIPTION VS-8S2TH06FP 600 V series are the state of the art tandem hyperfast recovery rectifiers: excellent switching performance and extremely low forward voltage drop trade off is overcome, boosting overall application performance. Specially designed for CCM PFC application, these devices show incomparable performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system, increased operating frequency make possible use of smaller reactive elements. Cost effective PFC application is then possible with high efficiency over wide input voltage range and loading factor. Plastic insulated package features easy mounting together with not insulated parts. PRODUCT SUMMARY Package 2L TO-220FP IF(AV) 8 A VR 600 V VF at IF 2.4 V trr (typ.) See Recovery table TJ max. 175 °C Diode variation Doubler 1 2 2L TO-220 FULL-PAK ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage VRRM 600 V DC forward current IF 50 % duty cycle, rect. waveforms, TC = 93 °C 8 A Non-repetitive peak surge current IFSM TC = 25 °C 100 Operating junction and storage temperatures TJ, TStg - 55 to 175 °C ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 - - V Forward voltage VF IF = 8 A - 2.1 2.4 IF = 8 A, TJ = 125 °C - 1.7 2 IF = 8 A, TJ = 150 °C - 1.6 1.8 Reverse leakage current IR VR = VR rated - < 1 10 μA TJ = 125 °C, VR = VR rated - 7 80 TJ = 150 °C, VR = VR rated - 27 100 Junction capacitance CT VR = 600 V - 12 - pF |
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