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8S2TH06FP Datasheet(PDF) 4 Page - Vishay Siliconix |
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8S2TH06FP Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 7 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94553 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Aug-10 VS-8S2TH06FP Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: TC = TJ - (Pd +PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 50 % rated VR Average Forward Current - IF(AV)(A) 0 2 4 6 8 10 12 14 0 50 100 150 200 DC 50% rated Vr applied Square Wave (D = 50) see note (1) Average Forward Current-IF(AV)(A) 02 468 10 12 0 5 10 15 20 25 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 RMS Limit DC di F /dt (A/μs ) 0 0 0 1 0 0 1 10 100 If = 8A, 125°C If = 8A, 25°C Vr = 390V di F/dt (A/μs ) 0 0 0 1 0 0 1 10 100 1000 If = 8A, 125°C If = 8A, 25°C Vr = 390V |
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