2N5885 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

2N5885/5886

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

2N5885

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

2N5886

IC= 200mA ; IB= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 15A; IB= 1.5A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 25A; IB= 6.25A

4.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 25A; IB= 6.25A

2.5

VBE(on)

Base-Emitter On Voltage

IC= 10A ; VCE= 4V

1.5

2N5885

VCE= 30V; IB= 0

2.0

ICEO

Collector

Cutoff Current

2N5886

VCE= 40V; IB= 0

2.0

2N5885

VCE= 60V; VBE(off)= 1.5V

VCE= 60V; VBE(off)= 1.5V,TC=150℃

1.0

ICEX

Collector

Cutoff Current

2N5886

VCE= 80V; VBE(off)= 1.5V

VCE= 80V; VBE(off)= 1.5V,TC=150℃

1.0

2N5885

VCB= 60V; IE= 0

1.0

ICBO

Collector

Cutoff Current

2N5886

VCB= 80V; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

1.0

hFE-1

DC Current Gain

IC= 3A ; VCE= 4V

hFE-2

DC Current Gain

IC= 10A ; VCE= 4V

100

hFE-3

DC Current Gain

IC= 25A ; VCE= 4V

COB

Output Capacitance

IE= 0;VCB= 10V;ftest= 1MHz

500

Current-Gain

—Bandwidth Product

IC= 1A ; VCE= 10V ;ftest= 1MHz

MHz

Switching Times

Rise Time

0.7

μs

tstg

Storage Time

1.0

μs

Fall Time

IC= 10A; IB1= -IB2= 1A;VCC= 30V

0.8

μs

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