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2N5885 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N5885
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5885 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistors
2N5885/5886
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@IC= 10A
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 15A
·Complement to Type 2N5883/5884
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
2N5885
60
VCBO
Collector-Base Voltage
2N5886
80
V
2N5885
60
VCEO
Collector-Emitter Voltage
2N5886
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation @TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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