20ETF02SPBF datasheet(2/8 Pages) VISHAY

2 / 8 page

VS-20ETF..SPbF Series

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Vishay Semiconductors

Revision: 17-Aug-11

Document Number: 94097

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.

For recommended footprint and soldering techniques refer to application note #AN-994.

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM

20 A, TJ = 25 °C

1.30

60 A, TJ = 25 °C

1.67

Forward slope resistance

12.5



Threshold voltage

VF(TO)

TJ = 150 °C

0.9

Maximum reverse leakage current

IRM

TJ = 25 °C

VR = Rated VRRM

0.1

TJ = 150 °C

5.0

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Reverse recovery time

trr

IF at 20 Apk

100 A/μs

25 °C

160

Reverse recovery current

Irr

Reverse recovery charge

Qrr

1.25

μC

Snap factor

Typical

0.6

dir

RM(REC)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 40 to 150

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation

0.9

°C/W

Maximum thermal resistance

junction to ambient (PCB mount)

RthJA (1)

Soldering temperature

240

°C

Approximate weight

0.07

oz.

Marking device

Case style TO-263AB (D2PAK)

20ETF02S

20ETF04S

20ETF06S

20ETF02SPBF Datasheet(PDF) 2 Page - Vishay Siliconix

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