2N6383 datasheet(1/3 Pages) ISC

Part #	2N6383

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6383 2N6384 2N6385

DESCRIPTION

・With TO-3 package

・Complement to type 2N6648/6649/6650

・DARLINGTON

・High DC current gain

APPLICATIONS

・Designed for low and medium frequency

power application such as power switching

audio amplifer ,hammer drivers and shunt

and series regulators

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6383

40

2N6384

60

VCBO

Collector-base voltage

2N6385

Open emitter

80

V

2N6383

40

2N6384

60

VCEO

Collector-emitter voltage

2N6385

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

10

A

ICM

Collector current-peak

15

A

IB

Base current

0.25

A

PD

Total Power Dissipation

TC=25℃

100

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.75

℃/W

Fig.1 simplified outline (TO-3) and symbol

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2N6383 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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