2N6676 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6676 2N6677 2N6678

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N6676

300

2N6677

350

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6678

IC=0.2A ; IB=0

400

VCEsat

Collector-emitter saturation voltage

IC=15A; IB=3A

1.5

VBEsat

Base-emitter saturation voltage

IC=15A; IB=3A

1.5

ICEV

Collector cut-off current

VCE=RatedVCEV;VBE(off)=-1.5V

TC=100℃

0.1

1.0

IEBO

Emitter cut-off current

VEB=8V; IC=0

2.0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE -2

DC current gain

IC=15A ; VCE=3V

COB

Output capacitance

IE=0 ;VCB=10V;f=0.1MHz

500

Transition frequency

IC=1A ; VCE=10V;f=5.0MHz

MHz

Switching times

Delay time

0.2

μs

Rise time

0.6

μs

Storage time

2.5

μs

Fall time

IC=15A; IB1=-IB2=3.0A

VCC=200V; tp=20μs;

Duty Cycle≤2.0%

VBB=6V,RL=1.35Ω

0.6

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.0

℃/W

2N6676 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

2N6676 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Datasheet Download

Link URL