2N6676 datasheet(1/3 Pages) ISC

Part #	2N6676

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6676 2N6677 2N6678

DESCRIPTION

・With TO-3 package

・High voltage capability

・Fast switching speeds

・Low saturation voltage

APPLICATIONS

Designed for high voltage switching

applications such as :

・Off-line power supplies

・Converter circuits

・Pulse width modulated regulators

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6676

450

2N6677

550

VCBO

Collector-base voltage

2N6678

Open emitter

650

V

2N6676

300

2N6677

350

VCEO

Collector-emitter voltage

2N6678

Open base

400

V

VEBO

Emitter-base voltage

Open collector

8

V

IC

Collector current

15

A

ICM

Collector current-peak

20

A

IB

Base current

5

A

PT

Total power dissipation

Tc=25℃

175

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

Fig.1 simplified outline (TO-3) and symbol

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2N6676 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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