82RIA80MPBF datasheet(2/8 Pages) VISHAY

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Document Number: 94392

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Revision: 17-Sep-10

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 80 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

at case temperature

IT(AV)

180° conduction, half sine wave

°C

Maximum RMS on-state current

IT(RMS)

DC at 75 °C case temperature

125

Maximum peak, one-cycle

non-repetitive surge current

ITSM

t = 10 ms

No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

1900

t = 8.3 ms

1990

t = 10 ms

100 % VRRM

reapplied

1600

t = 8.3 ms

1675

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

kA2s

t = 8.3 ms

t = 10 ms

100 % VRRM

reapplied

12.7

t = 8.3 ms

11.7

Maximum I2

t for fusing

t

t = 0.1 ms to 10 ms, no voltage reapplied

180.5

kA2

s

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

0.99

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ = TJ maximum

1.13

Low level value of on-state slope resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

2.29



High level value of on-state slope resistance

rt2

(I >

 x I

T(AV)), TJ = TJ maximum

1.84

Maximum on-state voltage

VTM

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse

1.60

Maximum holding current

TJ = 25 °C, anode supply 12 V resistive load

200

Typical latching current

400

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum non-repetitive rate of

rise of turned-on current

dI/dt

TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber

0.2 μF, 15

, gate pulse: 20 V, 65 , t

p = 6 μs, tr = 0.5 μs

Per JEDEC standard RS-397, 5.2.2.6.

300

A/μs

Typical delay time

Gate pulse: 10 V, 15

 source, t

p = 6 μs, tr = 0.1 μs,

Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C

μs

Typical turn-off time

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V,

dV/dt = 20 V/μs, gate bias: 0 V 25

, t

p = 500 μs

110

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of

off-state voltage

dV/dt

TJ = 125 °C exponential to 67 % rated VDRM

500

V/μs

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = 125 °C rated VDRM/VRRM applied

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