Document Number: 94392

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 17-Sep-10

3

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Phase Control Thyristors

(Stud Version), 80 A

Vishay Semiconductors

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

12

W

Maximum average gate power

3

Maximum peak positive gate current

3A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

10

Maximum DC gate current required to trigger

Maximum required gate trigger/

current/voltage are the lowest value

which will trigger all units 6 V anode

to cathode applied

270

mA

120

60

Maximum DC gate voltage required to trigger

3.5

V

2.5

1.5

DC gate current not to trigger

Maximum gate current/voltage not to

trigger is the maximum value which

will not trigger any unit with rated

6mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

temperature range

- 40 to 125

°C

Maximum storage temperature range

- 40 to 150

Maximum thermal resistance,

junction to case

DC operation

0.30

K/W

Maximum thermal resistance,

case to heatsink

Mounting surface, smooth, flat and greased

0.1

Mounting torque, ± 10 %

Non-lubricated threads

15.5

(137)

N · m

(lbf · in)

Lubricated threads

14

(120)

Approximate weight

130

g

Case style

See dimensions - link at the end of datasheet

TO-209AC (TO-94)