Pre-Production

This is a product in the pre-production phase of development. Device

Ramtron International Corporation

characterization is complete and Ramtron does not expect to change the

1850 Ramtron Drive, Colorado Springs, CO 80921

specifications. Ramtron will issue a Product Change Notice if any

(800) 545-FRAM, (719) 481-7000

specification changes are made.

http://www.ramtron.com

Rev. 2.0

Apr. 2011

Page 1 of 15

FM21L16

2Mbit F-RAM Memory

Features

2Mbit Ferroelectric Nonvolatile RAM

•

Organized as 128Kx16

•

Configurable as 256Kx8 Using /UB, /LB

•

•

NoDelay™ Writes

•

Page Mode Operation to 33MHz

•

Advanced High-Reliability Ferroelectric Process

SRAM Compatible

•

Industry Std. 128Kx16 SRAM Pinout

•

60 ns Access Time, 110 ns Cycle Time

Advanced Features

•

Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules

•

No Battery Concerns

•

Monolithic Reliability

•

True Surface Mount Solution, No Rework Steps

•

Superior for Moisture, Shock, and Vibration

Low Power Operation

•

2.7V – 3.6V Power Supply

•

Low Current Mode (5µA) using ZZ pin

•

Low Active Current (8 mA typ.)

Industry Standard Configuration

•

Industrial Temperature -40

° C to +85° C

•

44-pin “Green”/RoHS TSOP-II package

Description

The FM21L16 is a 128Kx16 nonvolatile memory that

reads and writes like a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional

disadvantages,

and

system

design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and high write endurance make the

F-RAM superior to other types of memory.

In-system operation of the FM21L16 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The F-RAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM21L16 ideal for

nonvolatile memory applications requiring frequent

or rapid writes in the form of an SRAM.

The FM21L16 includes a low voltage monitor that

inadvertent access and data corruption under this

condition. The device also features software-

controlled write protection. The memory array is

divided into 8 uniform blocks, each of which can be

individually write protected.

The device is available in a 400 mil 44-pin TSOP-II

surface mount package. Device specifications are

guaranteed over industrial temperature range –40°C

to +85°C.

Pin Configuration

Ordering Information

FM21L16-60-TG

60 ns access, 44-pin

“Green”/RoHS TSOP-II

FM21L16-60-TGTR

60 ns access, 44-pin

“Green”/RoHS TSOP-II,

Tape & Reel