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FM21L16 Datasheet(PDF) 11 Page - Ramtron International Corporation

Part # FM21L16
Description  2Mbit F-RAM Memory
PDF  15 Pages
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Manufacturer  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM21L16 Datasheet(HTML) 11 Page - Ramtron International Corporation

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FM21L16 - 128Kx16 FRAM
Rev. 2.0
Apr. 2011
Page 11 of 15
Power Cycle and Sleep Mode Timing (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
tPU
Power Up (after VDD min. is reached) to First Access Time
450
-
µs
tPD
Last Write (/WE high) to Power Down Time
0
-
µs
tVR
VDD Rise Time
50
-
µs/V
1,2
tVF
VDD Fall Time
100
-
µs/V
1,2
tZZH
/ZZ Active to DQ Hi-Z Time
-
20
ns
tWEZZ
Last Write to Sleep Mode Entry Time
0
-
µs
tZZL
/ZZ Active Low Time
1
-
µs
tZZEN
Sleep Mode Entry Time (/ZZ low to /CE don’t care)
-
0
µs
tZZEX
Sleep Mode Exit Time (/ZZ high to 1st access after wakeup)
-
450
µs
Notes
1.
Slope measured at any point on VDD waveform.
2.
Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict
when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than
100ms through the range of 0.4V to 1.0V.
Data Retention (VDD = 2.7V to 3.6V)
Parameter
Min
Units
Notes
Data Retention
10
Years
AC Test Conditions
Input Pulse Levels
0 to 3V
Input and Output Timing Levels
1.5V
Input Rise and Fall Times
3 ns
Output Load Capacitance
30pF
Read Cycle Timing 1 (/CE low, /OE low)
Read Cycle Timing 2 (/CE-controlled)



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