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ATP216 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP216
Description  General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP216 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP216
No.8985-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.4
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=18A
58
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=18A, VGS=4.5V
17
23
mΩ
RDS(on)2
ID=9A, VGS=2.5V
20
28
mΩ
RDS(on)3
ID=5A, VGS=1.8V
30
45
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
2700
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
See specified Test Circuit.
90
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
220
ns
Fall Time
tf
See specified Test Circuit.
105
ns
Total Gate Charge
Qg
VDS=30V, VGS=4.5V, ID=35A
30
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=4.5V, ID=35A
5.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=4.5V, ID=35A
7.9
nC
Diode Forward Voltage
VSD
IS=35A, VGS=0V
0.96
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=18A
RL=1.67Ω
VDD=30V
VOUT
ATP216
VIN
4.5V
0V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
VDS=10V
IT16430
IT16431
0
3.0
2.5
1.5
0
0
35
15
20
30
25
5
10
1.0
0.1
0.7
0.6
0.5
0.3
0.4
0.2
0.9
0.8
0
50
40
30
1.0
0.5
2.0
20
10
5
45
35
25
15
3.0V
VGS=1.5V
Tc=25
°C
1.8V
2.0V
2.5V
3.5V



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