ATP218 datasheet(1/4 Pages) SANYO

Part #	ATP218

Description	General-Purpose Switching Device Applications

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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1 / 4 page

ATP218

No.8970-1/4

Features

•

ON-resistance RDS(on)1=2.9mΩ(typ.)

•

Input Capacitance Ciss=6600pF(typ.)

•

2.5V drive

•

Halogen free compliance

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

30

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

100

A

Drain Current (PW≤10μs)

IDP

PW≤10μs, duty cycle≤1%

300

A

Allowable Power Dissipation

PD

Tc=25°C60

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

235

mJ

Avalanche Current *2

IAV

50

A

Note :

*1 VDD=15V, L=100μH, IAV=50A

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

Ordering number : EN8970

51111PA TKIM TC-00002592

SANYO Semiconductors

DATA SHEET

ATP218

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

0.4

0.55

13

2

6.5

0.6

4

0.8

1.5

0.4

2.6

4.6

0.4

2.3

TL

ATP218

LOT No.

1

3

2,4

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