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ATP218 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP218
Description  General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP218 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP218
No.8970-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=50A
260
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=50A, VGS=4.5V
2.9
3.8
mΩ
RDS(on)2
ID=25A, VGS=2.5V
4.0
5.6
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
6600
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
780
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
600
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
88
ns
Rise Time
tr
See specified Test Circuit.
960
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
340
ns
Fall Time
tf
See specified Test Circuit.
320
ns
Total Gate Charge
Qg
VDS=15V, VGS=4.5V, ID=100A
70
nC
Gate-to-Source Charge
Qgs
VDS=15V, VGS=4.5V, ID=100A
20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=15V, VGS=4.5V, ID=100A
14
nC
Diode Forward Voltage
VSD
IS=100A, VGS=0V
0.91
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=50A
RL=0.3Ω
VDD=15V
VOUT
ATP218
VIN
4.5V
0V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
VDS=10V
IT16418
IT16419
0
2.5
1.5
0
0
100
40
60
70
90
80
50
30
20
10
3.0
0.5
2.0
1.5
1.0
2.5
0
150
120
90
1.0
0.5
2.0
60
30
VGS=1.5V
Tc=25
°C
1.8V
2.0V



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