ECH8656 datasheet(1/4 Pages) SANYO

Part #	ECH8656

Description	General-Purpose Switching Device Applications

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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1 / 4 page

ECH8656

No.9010-1/4

Features

•

ON-resistance RDS(on)1=13mΩ (typ.)

•

1.8V drive

•

Halogen free compliance

•

Nch + Nch MOSFET

•

Protection diode in

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

7.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

40

A

Allowable Power Dissipation

PD

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

1.3

W

Total Dissipation

PT

When mounted on ceramic substrate (900mm2×0.8mm)

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7011A-001

83111PE TKIM TC-00002622

SANYO Semiconductors

DATA SHEET

ECH8656

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SANYO : ECH8

1

4

85

0.15

0 t o 0.02

0.65

2.9

0.3

To p View

Bo tto m View

Ordering number : EN9010

TL

TB

LOT No.

8765

1234

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