BYT53F datasheet(2/4 Pages) VISHAY

2 / 4 page

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G

Vishay Semiconductors

Ultra Fast Avalanche Sinterglass

Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

Document Number: 86030

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Rev. 1.9, 04-Aug-10

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Thermal Resistance vs. Lead Length

Fig. 2 - Max. Forward Current vs. Forward Voltage

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Max. Reverse Current vs. Junction Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 1 A

1.1

IF = 1 A, Tj = 175 °C

0.9

Reverse current

VR = VRRM

μA

VR = VRRM, Tj = 150 °C

200

μA

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

100

120

202530

l - Lead Length (mm)

949552

L = constant

0.001

0.01

0.1

0.5

1.5

2.5

VF - Forward Voltage (V)

16333

j = 175 °C

j = 25 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

80 100 120 140 160 180

Tamb - Junction Temperature (°C)

16334

VR = V

RRM

half sine wave

thJA = 45 K/W

l = 10 mm

PCB: d = 25 mm

thJA = 100 K/W

100

1000

100

125

150

175

16335

R = VRRM

Tj - Junction Temperature (°C)

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