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2SD826 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD826 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD826 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=60mA(pulse) 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=60mA(pulse) 1.5 V ICBO Collector cut-off current VCB=50V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 120 560 hFE-2 DC current gain IC=3A ; VCE=2V(pulse) 95 fT Transition frequency IC=50mA ; VCE=10V 120 MHz COB Collector output capacitance f=1MHz ; VCB=10V 45 pF Switching times ton Turn-on time 30 ns tstg Storage time 300 ns tf Fall time IC=2A ;IB1=-IB2=0.2A VCC=10V; RL=5Ω 40 ns hFE-1 Classifications E F G 120-200 160-320 280-560 |
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