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2SD826 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD826 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD826 DESCRIPTION ・ ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・Large current capacity APPLICATIONS ・For 3V, 6V strobe applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak t=100ms 8 A Ta=25℃ 1.0 PC Collector power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
Similar Part No. - 2SD826 |
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Similar Description - 2SD826 |
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