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LV51135T Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # LV51135T
Description  2-Cell Lithium-Ion Secondary Battery Protection IC
PDF  8 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LV51135T Datasheet(HTML) 2 Page - Sanyo Semicon Device

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LV51135T
No.A1265-2/8
Specifications
Absolute Maximum Ratings
at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Power supply voltage
VDD
-0.3 to +12
V
Input voltage
Charger minus voltage
V-
VDD-28 to VDD+0.3
V
Cout pin voltage
Vcout
VDD-28 to VDD+0.3
V
Output voltage
Dout pin voltage
Vdout
VSS-0.3 to VDD+0.3
V
Allowable power dissipation
Pd max
Independent IC
170
mW
Operating ambient temperature
Topr
-30 to +80
°C
Storage temperature
Tstg
-40 to +125
°C
Electrical Characteristics
at Ta = 25
°C, unless especially specified.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Operation input voltage
Vcell
Voltage between VDD and VSS
1.5
10
V
0V cell charging minimum operation
voltage
Vmin
Voltage between VDD-V- under VDD-VSS =0
1.5
V
4.225
4.250
4.275
V
Over-charge detection voltage
Vd1
Ta=0 to 45
°C *1
4.215
4.250
4.285
V
V-
≤ Vd3
4.000
4.050
4.100
V
Over-charge release voltage
Vr1
V- > Vd3
4.150
4.260
V
Over-charge detection delay time
td1
VDD-Vc=3.5V→4.5V, Vc-VSS=3.5V
0.5
1.0
1.5
s
Over-charge release delay time
tr1
VDD-Vc=4.5V→3.5V, Vc-VSS=3.5V
20.0
40.0
60.0
ms
Over-discharge detection voltage
Vd2
2.30
2.40
2.50
V
Over-discharge release hysteresis
voltage
Vh2
10.0
20.0
42.0
mV
Over-discharge detection delay time
td2
VDD-Vc=3.5V→2.2V, Vc-VSS=3.5V
50
100
150
ms
Over-discharge release delay time
tr2
VDD-Vc=2.2V→3.5V, Vc-VSS=3.5V
0.5
1.0
1.5
ms
Over-current detection voltage
Vd3
VDD-Vc=3.5V, Vc-VSS=3.5V
0.130
0.150
0.170
V
Over-current release hysteresis voltage
Vh3
VDD-Vc=3.5V, Vc-VSS=3.5V
5.0
10.0
20.0
mV
Over-current detection delay time
td3
VDD-Vc=3.5V, Vc-VSS=3.5V
10.0
20.0
30.0
ms
Over-current release delay time
tr3
VDD-Vc=3.5V, Vc-VSS=3.5V
0.5
1.0
1.5
ms
Short circuit detection voltage
Vd4
VDD-Vc=3.5V, Vc-VSS=3.5V
1.0
1.3
1.6
V
Short circuit detection delay time
td4
VDD-Vc=3.5V, Vc-VSS=3.5V
0.125
0.250
0.500
ms
Excessive charger detection voltage
Vd5
Between VDD-Vc=3.5V, Vc-VSS=3.5V
Voltage between V- and VSS
-0.60
-0.45
-0.30
V
Excessive charge detection release
hysteresis voltage
Vh5
VDD-Vc=3.5V, Vc-VSS=3.5V
25.0
50.0
100.0
mV
Stand-by release voltage
Vstb
Between VDD-Vc=2.0V, Vc-VSS=2.0V
Voltage between V- and VSS
VDD×0.4
VDD×0.5
VDD×0.6
V
Excessive charger detection delay time
td5
VDD-Vc=3.5V, Vc-VSS=3.5V *2
0.5
1.5
3.0
ms
Excessive charger release delay time
tr5
VDD-Vc=3.5V, Vc-VSS=3.5V
0.5
1.5
3.0
ms
Internal resistance (VM-VDD)
RDD
After over-discharge is detected.
100
200
400
k
Ω
Internal resistance (VM-VSS)
RSS
After over-current or short-circuit is detected.
15
30
60
k
Ω
Cout Nch ON voltage
VOL1
IOL=50μA, VDD-Vc=4.4V, Vc-VSS=4.4V
0.5
V
Cout Pch ON voltage
VOH1
IOL=50μA, VDD-Vc=3.9V, Vc-VSS=3.9V
VDD-0.5
V
Dout Nch ON voltage
VOL2
IOL=50μA, VDD-Vc=2.2V, Vc-VSS=2.2V
0.5
V
Dout Pch ON voltage
VOH2
IOL=50μA, VDD-Vc=3.9V, Vc-VSS=3.9V
VDD-0.5
V
Vc input current
Ivc
VDD-Vc=3.5V, Vc-VSS=3.5V
0.0
1.0
μA
Current consumption
IDD
VDD-Vc=3.5V, Vc-VSS=3.5V
6.0
13.0
μA
Stand-by current
Istb
VDD-Vc=2.2V, Vc-VSS=3.5V
0.2
μA
T-terminal input ON voltage
Vtest
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD×0.4
VDD×0.5
VDD×0.6
V
*1 The Ratings of the table above is a design targets and are not measured.
*2 Under over-discharge state, delay operation starts after release of over-discharge.



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