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GF1J Datasheet(PDF) 1 Page - Vishay Siliconix |
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GF1J Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() Document Number: 88617 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier GF1A thru GF1M Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 μA TJ max. 175 °C DO-214BA (GF1) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT Device marking code GA GB GD GG GJ GK GM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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