BU323AP datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU323AP

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.2A; IB=0;L=10mH

400

VCER(SUS)

Collector-emitter sustaining voltage

IC=3A; RBE=100Ω;L=500μH

475

VCEsat-1

Collector-emitter saturation voltage

IC=3 A;IB=60mA

1.5

VCEsat-2

Collector-emitter saturation voltage

IC=6A;IB=120m A

1.7

VCEsat-3

Collector-emitter saturation voltage

IC=10A;IB=300m A

2.7

VBEsat-1

Base-emitter saturation voltage

IC=6A;IB=120m A

2.2

VBEsat-2

Base-emitter saturation voltage

IC=10A;IB=300m A

ICER

Collector cut-off current

VCE=Rated;VBE=100Ω

IEBO

Emitter cut-off current

VEB=6V; IC=0

ICBO

Collector cut-off current

VCB=Rated; IE=0

hFE-1

DC current gain

IC=3A ; VCE=6V

300

550

hFE-2

DC current gain

IC=6A ; VCE=6V

150

350

2000

hFE-3

DC current gain

IC=10A ; VCE=6V

150

VBE

Base-emitter on voltage

IC=10A ; VCE=6V

2.5

Diode forward voltage

IF=10A

3.5

Cob

Output capacitance

VCB=10V,IE=0;fT=100kHz

165

350

Switching times

Storage time

7.5

μs

Fall time

IC=6A ;

IB1=IB2=0.3A

VCC=12V ;

5.2

μs

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