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BU323AP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU323AP
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU323AP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU323AP Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU323AP Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU323AP Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU323AP
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·Low collector saturation voltage
APPLICATIONS
·Designed for automotive ignition,switching
regulator and motor control applications.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCEO(SUS)
Collector-emitter voltage
Open base
400
V
VCEV
Collector-emitter voltage
Open base
475
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
16
A
IB
Base current
3
A
PD
Total power dissipation
TC=25℃
125
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
1.0
℃/W
Fig.1 simplified outline (TO-3PN) and symbol


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