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BA887 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BA887 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() Type Ordering Code Pin Configuration Marking Package (taped) 1 2 3 BA 887 Q62702- A C PDs SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage V R 50 V Forward current I F 100 mA Total power dissipation T S ≤ 40 °C 1) P tot 250 mW Junction temperature T j 150 °C Storage temperature range T stg – 55 … + 150 °C Thermal Resistance Junction-soldering point1) R th JS ≤ 220 K/W Junction-ambient R th JA ≤ 300 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Silicon PIN Diode Preliminary Data BA 887 q RF switch, RF attenuator for frequencies above 10 MHz q Very low IM distortion Semiconductor Group 1 10 94 |
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Similar Description - BA887 |
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