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BA887 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BA887 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 3 page ![]() Semiconductor Group 2 BA 887 Characteristics per Diode at T A = 25 °C, unless otherwise specified. Package Outline Parameter Symbol Value Unit min. typ. max. Reverse current V R =30V I R ––20 nA Forward voltage I F = 100 mA V F – 0.9 – V Diode capacitance V R =10V, f = 1 MHz V R =0V, f = 100 MHz C T – – 0.52 0.27 – – pF Forward resistance f = 100 MHz I F = 1.5 mA I F =10mA r f – – 22 4.2 – – Ω Charge carrier lifetime I F =10mA, IR = 6 mA, IR =3mA τ L – 2.5 – µs SOT-23 |
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