GSOT03C datasheet(5/12 Pages) VISHAY

5 / 12 page

Document Number: 85824

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-23 Vishay Semiconductors

If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in

parallel in order to “double” the performance.

This offers:

• double surge power = double peak pulse current (2 x IPPM)

• half of the line inductance = reduced clamping voltage

• half of the line resistance = reduced clamping voltage

• double line capacitance (2 x CD)

• double reverse leakage current (2 x IR)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)

20358

Ground

BiAs

20359

Ground

ELECTRICAL CHARACTERISTICS GSOT03C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse working voltage

at IR = 100 μA

VRWM

3.3

Reverse current

at VR = 3.3 V

100

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

44.6

Reverse clamping voltage

at IPP = 1 A

-5.7

7.5

at IPP = IPPM = 30 A

12.3

Forward clamping voltage

at IPP = 1 A

-1

1.2

at IPP = IPPM = 30 A

4.5

Capacitance

at VR = 0 V; f = 1 MHz

420

600

at VR = 1.6 V; f = 1 MHz

260

ELECTRICAL CHARACTERISTICS GSOT04C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse working voltage

at IR = 20 μA

VRWM

Reverse current

at VR = 4 V

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

56.1

Reverse clamping voltage

at IPP = 1 A

-7.5

at IPP = IPPM = 30 A

11.2

14.3

Forward clamping voltage

at IPP = 1 A

-1

1.2

at IPP = IPPM = 30 A

4.5

Capacitance

at VR = 0 V; f = 1 MHz

310

450

at VR = 2 V; f = 1 MHz

200

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