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GSOT03C Datasheet(PDF) 9 Page - Vishay Siliconix

Part # GSOT03C
Description  Two-Line ESD-Protection in SOT-23
PDF  12 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSOT03C Datasheet(HTML) 9 Page - Vishay Siliconix

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Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 2.0, 22-Jul-10
9
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 5 μA
VRWM
8.5
-
-
V
Reverse current
at VR = 8.5 V
IR
--
5
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
9.5
10.7
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-
11.7
14
V
at IPP = IPPM = 18 A
-
18.5
22.2
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
80
125
pF
at VR = 4 V; f = 1 MHz
-
60
-
pF
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 1 μA
VRWM
12.5
-
-
V
Reverse current
at VR = 12.5 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
13.5
15.7
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-
16.4
19.7
V
at IPP = IPPM = 12 A
-
23.4
28.1
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-58
75
pF
at VR = 7.5 V; f = 1 MHz
-
36
-
pF
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 1 μA
VRWM
15.5
-
-
V
Reverse current
at VR = 15.5 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
17
18.7
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-
20.4
24.5
V
at IPP = IPPM = 8 A
-
26.6
30.6
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-45
60
pF
at VR = 7.5 V; f = 1 MHz
-
25
-
pF
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 1 μA
VRWM
24.5
-
-
V
Reverse current
at VR = 24.5 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
27.5
30.7
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-34
41
V
at IPP = IPPM = 5 A
-
40
48
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-33
40
pF
at VR = 12 V; f = 1 MHz
-
18
-
pF



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