BUL742C datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL742C

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 500mA; L= 125mH,

Imeasure= 100mA

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.8A; IB= 0.2A

0.2

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

0.4

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 0.8A; IB= 0.2A

1.0

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

1.2

ICES

Collector Cutoff Current

VCES= 900V; VEB=0

VCES= 900V; VEB=0,TC= 150℃

200

μA

hFE-1

DC Current Gain

IC= 10mA; VCE= 2V

hFE-2

DC Current Gain

IC= 0.8A; VCE= 2V

hFE-3

DC Current Gain

IC= 2.5A; VCE= 2V

hFE-4

DC Current Gain

IC= 5A; VCE= 2V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

VCEW

Collector-Emitter Working Voltage

VS= 50V; L= 1mH; IC= 2.5A;

IB1= -IB2= 0.5A; VBE(off)= -5V

500

Current-Gain—Bandwidth Product

IC= 0.2A; VCE= 10V; f= 1MHz

MHz

isc Website：www.iscsemi.cn

BUL742C Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

BUL742C Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL