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BUL742C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUL742C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 900 V VCEW Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 7.5 A IB B Base Current-Continuous 2.5 A IBM Base Current-peak 4 A PC Collector Power Dissipation TC=25℃ 50 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website:www.iscsemi.cn |
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