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BUV47AFI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV47AFI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV47AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V ICER Collector Cutoff Current VCE= 850V; RBE=10Ω VCE= 850V; RBE=10Ω;TC=125℃ 0.4 3.0 mA ICEV Collector Cutoff Current VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125℃ 0.15 1.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times, Resistive Load ton Turn-on Time 0.7 μs ts Storage Time 3.0 μs tf Fall Time IC= 5A; IB1= -IB2= 1A; VCC= 150V 0.8 μs isc Website:www.iscsemi.cn |
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