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BUV47AFI Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV47AFI Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV47AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching APPLICATIONS ·Designed for 220V switchmode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage RBE= 10Ω 1000 V VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 8 A IBM Base Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 55 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W isc Website:www.iscsemi.cn |
Similar Part No. - BUV47AFI |
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Similar Description - BUV47AFI |
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