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MJ21193 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ21193 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA; IB=0 B -250 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A ;IB=-0.8A B -1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A ;IB=-3.2A -4 V VBE(on) Base-Emitter On Voltage IC=-8A ; VCE=-5V -2.2 V ICEO Collector Cutoff Current VCE=-200V,IB=0 -0.1 mA ICEX Collector Cutoff Current VCE= -250V; VBE(off)= -1.5V -0.1 mA IEBO Emitter Cutoff Current VEB=-5V; IC=0 -100 μA hFE-1 DC Current Gain IC=-8A; VCE=-5V 25 75 hFE-2 DC Current Gain IC=-16A; VCE=-5V 8 COB Collector Capacitance IE= 0; f=1MHz ; VCB=-10V 500 pF fT Current Gain-Bandwidth Product IC=-1A ;VCE=-10V; ftest=1MHz 4 MHz isc Website:www.iscsemi.cn 2 |
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