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MJ21193 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ21193 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION ·Total Harmonic Distortion Characterized ·High DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Pulsed -30 A IB B Base Current-Continuous -5 A PD Total Power Dissipation (TC=25℃) 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C ThermalResistance Junction To Case 0.7 ℃/W isc Website:www.iscsemi.cn |
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