MJE4352 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE4350/4351/4352/4353

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

MJE4350

-100

MJE4351

-120

MJE4352

-140

VCEO(SUS)

Collector-emitter

sustaining voltage

MJE4353

IC=-100mA ;IB=0

-160

VCEsat-1

Collector-emitter saturation voltage

IC=-8A ;IB=-0.8A

-2.0

VCEsat-2

Collector-emitter saturation voltage

IC=-16A; IB=-2.0A

-3.5

VBEsat

Base-emitter saturation voltage

IC=-16A; IB=-2.0A

-3.9

VBE

Base-emitter on voltage

IC=-16A ; VCE=-4V

-3.9

MJE4350

VCE=-50V; IB=0

MJE4351

VCE=-60V; IB=0

MJE4352

VCE=-70V; IB=0

ICEO

Collector

cut-off current

MJE4353

VCE=-80V; IB=0

-0.75

ICEX

Collector cut-off current

VCE=RatedVCBO; VBE=-1.5V

TC=150℃

-1.0

-5.0

ICBO

Collector cut-off current

VCB=RatedVCB; IE=0

-0.75

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-1.0

hFE-1

DC current gain

IC=-8A ; VCE=-2V

hFE-2

DC current gain

IC=-16A ; VCE=-4V

COB

Output capacitance

IE=0 ; VCB=-10V;f=0.1MHz

800

Transition frequency

IC=-1A ; VCE=-20V;f=0.5MHz

1.0

MHz

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