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MJF45H11 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJF45H11 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Power Transistors MJF45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -2A; VCE= -1V 60 hFE-2 DC Current Gain IC= -4A; VCE= -1V 40 COB Output Capacitance VCB= -10V, f= 0.1MHz 230 pF fT Current-Gain—Bandwidth Product IC=-0.5A; VCE=-10V; ftest=20MHz 40 MHz Switching Times ton Turn-On Time IC= -5A; IB1= -0.5A 135 ns ts Storage Time 500 ns tf Fall Time IC= -5A; IB1= -IB2= -0.5A 100 ns |
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