SI8902EDB datasheet(3/9 Pages) VISHAY

3 / 9 page

Document Number: 71862

S-83049-Rev. I, 22-Dec-08

www.vishay.com

Vishay Siliconix

Si8902EDB

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

On-Resistance vs. Gate-to-Source Voltage

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 1.5 V

VDS - Drain-to-Source Voltage (V)

1 V

0.00

0.02

0.04

0.06

0.08

0.10

2468

VGS = 4.5 V

VGS = 2.5 V

ID - Drain Current (A)

VGS = 1.8 V

VGS = 3.7 V

0.00

0.02

0.04

0.06

0.08

0.10

1234

IS1S2 = 1 A

VGS - Gate-to-Source Voltage (V)

IS1S2 = 5 A

Transfer Characteristics

On-Resistance vs. Junction Temperature

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 4.5 V

IS1S2 = 1 A

TJ - Junction Temperature (°C)

- 0.4

- 0.3

- 0.2

- 0.1

0.0

0.1

0.2

- 50

- 25

100

125

150

IS1S2 = 980 µA

TJ - Temperature (°C)

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