SiC779DB datasheet(9/17 Pages) VISHAY

9 / 17 page

Vishay Siliconix

SiC779

Document Number: 67538

S11-0703-Rev. B, 18-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ELECTRICAL CHARACTERISTICS

SMOD Falling Threshold (V) vs. Temperature (°C)

VCIN = VDRV = 5 V

ICIN + IDRV (mA) vs. Temperature at Frequency = 1 MHz

D = 10 %, VCIN = VDRV = 5 V

PWM Falling Tristate (V) vs. Temperature (°C)

VCIN = VDRV = 5 V

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

1.0

1.1

1.2

1.3

1.4

1.5

1.6

SMOD Rising Threshold (V) vs. Temperature (°C)

VCIN = VDRV = 5 V

IDRV (mA) vs. Temperature at Frequency = 1 MHz

D = 10 %, VCIN = VDRV = 5 V

PWM Rising Tristate Threshold (V) vs. Temperature (°C)

VCIN = VDRV = 5 V

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

- 40 - 25 - 10

95 110 125 140

Temperature (°C)

3.0

3.2

3.4

3.6

3.8

4.0

4.2

4.4

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