SIE832DF datasheet(3/10 Pages) VISHAY

3 / 10 page

Document Number: 74414

S09-1338-Rev. C, 13-Jul-09

www.vishay.com

Vishay Siliconix

SiE832DF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.4

0.8

1.2

1.6

2.0

VGS = 10 V thru 4 V

VDS - Drain-to-Source Voltage (V)

VGS = 3 V

020

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0.003

0.004

0.005

0.006

0.007

0.008

102030405060

ID = 20 A

Qg - Total Gate Charge (nC)

VDS = 32 V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1.5

2.0

2.5

3.0

3.5

4.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

900

1800

2700

3600

4500

Crss

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

VGS = 10 V, 4.5 V

TJ - Junction Temperature (°C)

ID = 14 A

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