SIR404DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 64815

S09-0873-Rev. A, 18-May-09

www.vishay.com

Vishay Siliconix

SiR404DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 3 V

VDS - Drain-to-Source Voltage (V)

0.0005

0.0009

0.0013

0.0017

0.0021

0.0025

016

VGS =10 V

VGS =4.5 V

VGS =2.5 V

ID - Drain Current (A)

306090

120

150

ID =20A

VDS =15 V

VDS =10 V

VDS =5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

2000

4000

6000

8000

10 000

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

ID =20A

VGS =2.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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