SIR412DP datasheet(1/13 Pages) VISHAY

Part #	SIR412DP

Description	N-Channel 25-V (D-S) MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 13 page

Vishay Siliconix

SiR412DP

Document Number: 65364

S09-2029-Rev. A, 05-Oct-09

www.vishay.com

1

N-Channel 25-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK®

Package with Low 1.07 mm Profile

•

Optimized for High-Side Synchronous

Rectifier Operation

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Server, Desktop

- High-Side Switch

Notes:

a. Base on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (

www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, g

Qg (Typ.)

25

0.012 at VGS = 10 V

20

4.9 nC

0.015 at VGS = 4.5 V

20

Ordering Information: SiR412DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

20g

A

TC = 70 °C

20g

TA = 25 °C

13.4b, c

TA = 70 °C

10.7b, c

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

20g

TA = 25 °C

3.2b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

15

Avalanche Energy

EAS

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

15.6

W

TC = 70 °C

10

TA = 25 °C

3.9b, c

TA = 70 °C

2.5b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

27

32

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

6.4

8.0

Similar Part No. - SIR412DP

Manufacturer	Part #	Datasheet	Description
Vishay Telefunken	SIR410D	308Kb / 13P	N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SIR410DP	108Kb / 7P	N-Channel 20-V (D-S) MOSFET 27-Oct-08
	SIR410DP	374Kb / 13P	N-Channel 20 V (D-S) MOSFET 11-Dec-17
	SIR410DP-T1-GE3	374Kb / 13P	N-Channel 20 V (D-S) MOSFET 11-Dec-17
	SIR410DP	374Kb / 13P	N-Channel 20 V (D-S) MOSFET 11-Dec-17

More results

Similar Description - SIR412DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI1304DL	88Kb / 5P	N-Channel 25-V (D-S) MOSFET 04-Oct-04
	SIR850DP	109Kb / 7P	N-Channel 25-V (D-S) MOSFET 22-Sep-08
	SI4630DY	239Kb / 10P	N-Channel 25-V (D-S) MOSFET 02-Feb-09
	SI4778DY	244Kb / 10P	N-Channel 25-V (D-S) MOSFET 09-Mar-09
	SIR808DP	480Kb / 13P	N-Channel 25 V (D-S) MOSFET 04-Apr-11
Vishay Telefunken	SIE882DF	207Kb / 10P	N-Channel 25-V (D-S) MOSFET
Vishay Telefunken	SIR438DP	343Kb / 13P	N-Channel 25-V (D-S) MOSFET
Vishay Siliconix	SI4668DY	103Kb / 7P	N-Channel 25-V (D-S) MOSFET 09-Mar-09
Vishay Siliconix	SI7194DP	316Kb / 13P	N-Channel 25-V (D-S) MOSFET 31-Mar-08

More results

SIR412DP Datasheet(PDF) 1 Page - Vishay Siliconix

SIR412DP Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SIR412DP

Similar Description - SIR412DP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL